BAS116
Document number: DS30233 Rev. 10 - 2
2 of 4
www.diodes.com
November 2011
? Diodes Incorporated
BAS116
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
85 V
RMS Reverse Voltage
VR(RMS)
60 V
Forward Continuous Current (Note 4)
IFM
215 mA
Repetitive Peak Forward Current
IFRM
500 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
IFSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @TA
= 25°C
PD
250 mW
Thermal Resistance Junction to Ambient Air (Note 4) @TA
= 25°C
RθJA
500
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
85
?
?
V
IR
= 100
μA
Forward Voltage
VF
?
?
0.90
1.0
1.1
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Leakage Current (Note 5)
IR
?
?
5.0
80
nA
nA
VR
= 75V
VR
= 75V, T
j
= 150
°C
Total Capacitance
CT
?
2
?
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
?
3.0
μs
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
0 25 50 75 100 125 150
50
100
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)A
Fig. 1 Power Derating Curve
150
200
250
300
R = 500°C/WθJA
相关PDF资料
BAS16_D87Z DIODE ULT FAST 85V 200MA SOT23
BAS16HT1G DIODE 85V 200MA SOD323
BAS16HT3G DIODE SWITCH 200MA 75V SOD-323
BAS16LD,315 DIODE SW 100V SOD-882D
BAS16LP-7 DIODE SW GP 75V 250MW 2-DFN
BAS16SL DIODE FAST SS 85V 150MA SOD-923
BAS16T-7-F DIODE 85V 155MA SOT-523
BAS17,215 DIODE STABISTOR 5V 200MA SOT23
相关代理商/技术参数
BAS116 _R1 _00001 制造商:PanJit Touch Screens 功能描述:
BAS116 RFG 功能描述:DIODE GEN PURP 75V 200MA SOT23 制造商:taiwan semiconductor corporation 系列:- 包装:带卷(TR) 零件状态:在售 二极管类型:标准 电压 - DC 反向(Vr)(最大值):75V 电流 - 平均整流(Io):200mA 不同 If 时的电压 - 正向(Vf:1.25V @ 150mA 速度:小信号 =< 200mA(Io),任意速度 反向恢复时间(trr):3ns 不同?Vr 时的电流 - 反向漏电流:5nA @ 75V 不同?Vr,F 时的电容:2pF @ 0V,1MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:SOT-23 工作温度 - 结:-55°C ~ 150°C 标准包装:3,000
BAS116,215 功能描述:整流器 85V 215mA RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
BAS116,235 功能描述:整流器 DIODE LOW LEAKAGE TAPE-11 RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
BAS116 制造商:Infineon Technologies AG 功能描述:DIODE LOW LEAKAGE SOT-23
BAS116_ R2 _00001 制造商:PanJit Touch Screens 功能描述:
BAS116_07 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
BAS116_08 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT LOW LEAKAGE DIODE